Paper Title:
An Overview of the Diffusion Studies in the V-Si System
  Abstract

The diffusion study in the V-Si system is reviewed. We show that the indirect method used previously to determine the diffusion parameters draws unnecessary error. Rather the method developed by Wagner should be used to calculate the diffusion parameters directly from the composition profile.

  Info
Periodical
Defect and Diffusion Forum (Volumes 312-315)
Edited by
Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado
Pages
731-736
DOI
10.4028/www.scientific.net/DDF.312-315.731
Citation
S. Prasad, A. Paul, "An Overview of the Diffusion Studies in the V-Si System", Defect and Diffusion Forum, Vols. 312-315, pp. 731-736, 2011
Online since
April 2011
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