Paper Title:
Defects and Doping Effects in CdTe and CuInS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 57-58)
Edited by
F. H. Wöhlbier
Pages
445-461
DOI
10.4028/www.scientific.net/DDF.57-58.445
Citation
H.Y. Ueng, H.L. Hwang, "Defects and Doping Effects in CdTe and CuInS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing", Defect and Diffusion Forum, Vols. 57-58, pp. 445-461, 1988
Online since
January 1988
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Price
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