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Diffusion Processes in High Technology Materials

Defect and Diffusion Forum Volume 59

• Papers
• Abstracts

• p1 Point Defects and Diffusion in Silicon and Gallium Arsenide   [ 589 K ]
  Authors: U.M. Gösele, T.Y. Tan
• p17 Diffusion and Low Temperature Deformation by Diffusional Creep of Nanocrystalline Materials   [ 485 K ]
  Authors: Rainer Birringer, H.Thomas Hahn, H.J. Höfler, J. Karch, H. Gleiter
• p33 Dopant and Ion Beam Enhanced Grain Growth in Polycrystalline Silicon Films   [ 346 K ]
  Authors: C.V. Thompson
• p47 Interface Segregation and Cohesion   [ 568 K ]
  Authors: C.L. White
• p63 Oxidation of High Technology Materials   [ 561 K ]
  Authors: Jean Philibert
• p79 Interstitial-Substitutional Diffusion in Group III-V and Group IV Semiconductors: The Role of Dislocations   [ 889 K ]
  Authors: Nicolaas Stolwijk, M. Perret, Helmut Mehrer
• p99 Diffusion Barriers - For Thin Film Metallizations   [ 461 K ]
  Authors: S.P. Murarka
• p111 Contact Metallization for GaAs - A Report on the Development of a Non-Alloyed Ohmic Contact Scheme   [ 571 K ]
  Authors: L.C. Wang, F. Fang, E.D. Marshall, S.S. Lau
• p129 High Density Interconnect for Advanced VLSI Packaging   [ 284 K ]
  Authors: A.C. Adams, R.S. Bentson, W.J. Bertram, H.J. Levinstein, W.Q. McKnight, Jacques J. Rubin, B.A. ter Haar
• p137 Diffusion in Metallic Thin Films   [ 592 K ]
  Authors: D. Gupta
• p151 High Resolution Transmission Electron Microscopy of Grain Boundaries   [ 1 M ]
  Authors: William Krakow
• p167 Tunneling Microscopy of Surface Diffusion   [ 669 K ]
  Authors: J.E. Griffith, J.A. Kubby
• p179 Characterization of Interfacial Chemistry by Analytical Electron Microscopy   [ 710 K ]
  Authors: A.D. Romig, Jr.
• p197 Solute Interactions in Metals   [ 800 K ]
  Authors: S.M. Myers
• p213 Oxygen Diffusion in High T_c-Superconductors   [ 673 K ]
  Authors: Jules L. Routbort, Steven J. Rothman, Brian K. Flandermeyer, Lubomir J. Nowicki, Judith E. Baker