Paper Title:
Study of Diffusion of Copper in Silicon Doped Gallium Arsenide Using Photoinduced current Transient Sprectroscopy for Deep Level Characterization
  Abstract

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Periodical
Defect and Diffusion Forum (Volumes 95-98)
Edited by
M. Koiwa, K. Hirano, H. Nakajima and T. Okada
Pages
931-936
DOI
10.4028/www.scientific.net/DDF.95-98.931
Citation
L.M. Thomas, V.K. Lakdawala, "Study of Diffusion of Copper in Silicon Doped Gallium Arsenide Using Photoinduced current Transient Sprectroscopy for Deep Level Characterization", Defect and Diffusion Forum, Vols. 95-98, pp. 931-936, 1993
Online since
January 1993
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Price
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