Papers by keyword «Defect»
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An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults
Authors: A. Zywietz, P. Käckell, J. Furthmüller, Friedhelm Bechstedt
Keywords: Defect, First Principles Calculation, Stacking Faults, Vacancy
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Extended Defects in SiC and GaN Semiconductors
Authors: P. Pirouz
Keywords: Defect, Dislocations, Galium Nitride (GaN), Inversion Domains, Polytypes, Silicon Carbide SiC, Stacking Faults
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Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals
Authors: J. Anthony Powell, David J. Larkin, Andrew J. Trunek
Keywords: Characterization, Defect, Dislocations, Etching, Step Bunching, Transformation
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Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
Authors: Michio Tajima, Y. Kumagaya, Toshitake Nakata, M. Inoue, A. Nakamura
Keywords: Deep Levels, Defect, Gettering, Mapping, Photoluminescence PL, Vanadium
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DII Revisited in an Modern Guise - 6H and 4H SiC
Authors: S.G. Sridhara, D.G. Nizhner, R. P. Devaty, W.J. Choyke, T. Dalibor, Gerhard Pensl, Tsunenobu Kimoto
Keywords: Defect, Ion Implantation, Photoluminescence PL
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The Structural Integrity of Cast Aluminium Automotive Components Subjected to Fatigue Loads
Authors: J.F. Knott, Paul Bowen, J. Luo, H. Jiang, H.L. Sun
Keywords: Al Alloy LM25, Defect, Fatigue, Residual Stress, Shot Peening
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Electrically Active Defects in n-Type 4H- and 6H-SiC
Authors: J.P. Doyle, Lucjan Swadźba, B.G. Svensson
Keywords: Annealing, Defect, DLTS, Irradiation, Kinetic, SIMS
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Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance
Authors: Atsuo Kawasuso, Hisayoshi Itoh, Dai Bum Cha, Sohei Okada
Keywords: Defect, Electron Irradiation, ESR, Positron Lifetime, Vacancy
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ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
Authors: Dai Bum Cha, Hisayoshi Itoh, Norio Morishita, Atsuo Kawasuso, Takeshi Ohshima, Yuichi Watanabe, J. Ko, Kin Kiong Lee, Isamu Nashiyama
Keywords: Annealing, Defect, Electron Irradiation, Electron Spin Resonance
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Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN
Authors: U. Birkle, C. Thomas, M. Fehrer, S. Einfeldt, H. Heinke, D. Hommel
Keywords: Defect, ECR, Galium Nitride (GaN), Langmuir, MBE, Morphology, Nitrogen Species, Photoluminescence PL, Plasma, RF
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