Papers by keyword «Ion Implantation»
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Nanosized Lead-Cadmium Inclusions in Aluminum
Authors: Leif Sarholt, E. Johnson, A. Johansen, T.B. Stibius Jensen, A.B. Stibius Jensen, U. Dahmen
Keywords: Ion Implantation, Melting, Nanoscale Inclusions, Pb-Cd Alloys, Solidification
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Structural Characterization of Cu Metallic Clusters in Amorphous SiO2 by Synchrotron Radiation Grazing Incidence X-Ray Scattering and Diffraction
Authors: F. D'Acapito, D. Thiaudière, F. Zontone, J.R. Regnard
Keywords: Ion Implantation, Metallic Quantum Dots, Non-Linear Optical Materials, Small-Angle X-Ray Scattering, X-Ray Diffraction (XRD)
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DII Revisited in an Modern Guise - 6H and 4H SiC
Authors: S.G. Sridhara, D.G. Nizhner, R. P. Devaty, W.J. Choyke, T. Dalibor, Gerhard Pensl, Tsunenobu Kimoto
Keywords: Defect, Ion Implantation, Photoluminescence PL
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Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC
Authors: Anne Henry, T. Egilsson, I.G. Ivanov, Chris I. Harris, Susan Savage, Erik Janzén
Keywords: D2 Center, Ion Implantation, Photoluminescence PL, Vanadium
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Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen Ions
Authors: A. Kozanecki, C. Jeynes, Brian J. Sealy, W. Jantsch, S. Lanzerstorfer, W. Heiß, G. Prechtl
Keywords: Erbium Centres, Ion Implantation, Photoluminescence PL, RBS
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Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
Authors: M.B. Scott, James Scofield, Y.K. Yeo, R.L. Hengehold
Keywords: Annealing, Complexes, Defect Levels, DLTS, Ion Implantation, Silicon Carbide SiC
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Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
Authors: T. Troffer, Gerhard Pensl, Adolf Schöner, Anne Henry, Christer Hallin, Olle Kordina, Erik Janzén
Keywords: Admittance Spectroscopy, Gallium Acceptor, Hall-Effect, Ion Implantation
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Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers
Authors: T. Werninghaus, D.R.T. Zahn, R.A. Yankov, A. Mücklich, Jörg Pezoldt
Keywords: Epitaxy, Ion Implantation, Phase Transformation, Polytypism, Raman Spectroscopy, Transmission Electron Microscopy (TEM)
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Conductivity Control of SiC by In-Situ Doping and Ion Implantation
Authors: Tsunenobu Kimoto, A. Itoh, N. Inoue, O. Takemura, T. Yamamoto, T. Nakajima, Hiroyuki Matsunami
Keywords: Chemical Vapor Deposition (CVD), Conductivity Control, In Situ Impurity Doping, Ion Implantation, pn Junction Diode
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Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
Authors: Hisayoshi Itoh, T. Troffer, Gerhard Pensl
Keywords: Aluminium Acceptor, Boron Acceptor, C Coimplantation, Ion Implantation, Si Coimplantation Electrical Properties
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