Paper Title:
Optical-Property Profiling of SiO2 Films Containing Si Nanocrystals Formed by Si+ Implantation
  Abstract

A quantitative approach to determination of depth profiles of optical properties of Si-implanted SiO2 films based on spectroscopic ellipsometry (SE) is presented. From the SE measurements, the depth profiles of the complex refractive index of SiO2 films containing Si nanocrystals (Si-nc) are obtained with an effective medium approximation (EMA) in the wavelength range of 400-1200nm. The optical profiles obtained imply the existence of a wave-guide in the Si-doped SiO2 films.

  Info
Edited by
M. Gupta and Christina Y.H. Lim
Pages
133-136
DOI
10.4028/www.scientific.net/JMNM.23.133
Citation
Y. Liu, T.P. Chen, M.S. Tse, P.F. Ho, A.L.K. Tan, Y.C. Liu, "Optical-Property Profiling of SiO2 Films Containing Si Nanocrystals Formed by Si+ Implantation", Journal of Metastable and Nanocrystalline Materials, Vol. 23, pp. 133-136, 2005
Online since
January 2005
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