Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires |
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| Journal | Journal of Metastable and Nanocrystalline Materials (Volume 23) |
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| Volume | Science and Technology of Nanomaterials |
| Edited by | M. Gupta and Christina Y.H. Lim |
| Pages | 137-140 |
| DOI | 10.4028/www.scientific.net/JMNM.23.137 |
| Citation | X.B. Zeng et al., 2005, Journal of Metastable and Nanocrystalline Materials, 23, 137 |
| Authors | X.B. Zeng, X.B. Liao, S.T. Dai, B. Wang, Y.Y. Xu, X.B. Xiang, Z.H. Hu, H.W. Diao, G.L. Kong |
| Keywords | Chemical Vapor Deposition Processes, Nanomaterials, Semiconducting Silicon |
| Abstract | Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n |
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