Paper Title:

A TEM Microstuctural Study of the Factors Affecting the Compositional Modulation in GaInAsSb/GaSb Films

Periodical Journal of Nano Research (Volume 10)
Main Theme Journal of Nano Research Vol. 10
Pages 131-136
DOI 10.4028/www.scientific.net/JNanoR.10.131
Citation S. Konidaris et al., 2010, Journal of Nano Research, 10, 131
Online since April, 2010
Authors S. Konidaris, E. Welser, F. Dimroth, Efstathios K. Polychroniadis
Keywords Phase Separation, Semiconducting III-V Materials, TPV Cells
Price US$ 28,-
Article Preview
View full size
Abstract

Quaternary semiconductor alloys based on GaSb are suitable for thermo-photo voltaic cell applications as they have low and adjustable band-gap. However, they exhibit phase separation which destroys band-gap uniformity. In this work, GalnAsSb thin films grown on GaSb vicinal substrates were studied by Transmission Electron Microscopy, in order to determine the influence of the growth parameters on phase separation. It was found that the coatings exhibit two types of compositional modulation, one parallel and the other forming an angle with the substrate plane.