Paper Title:
Preparation of Nano Structured SiOC Thin Film for Low k Application
  Abstract

In our study, the dielectric properties of SiOC low k thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. A SiOC low k thin film was fabricated onto a n-type silicon wafer by dip coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in air at 300°C for 2h. The thickness of the film ranges from 1 μm to 1.7 μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and shows a dielectric constant as low as 3.26 without porosity added. The SiOC low k thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

  Info
Periodical
Edited by
Guest Editors: Andreas Öchsner, Irina V. Belova and Graeme E. Murch
Pages
85-88
DOI
10.4028/www.scientific.net/JNanoR.11.85
Citation
W. T. Kwon, J.H. Lee, S. R. Kim, H.T. Kim, H. S. Kim, Y.H. Yu, Y. Kim, "Preparation of Nano Structured SiOC Thin Film for Low k Application", Journal of Nano Research, Vol. 11, pp. 85-88, 2010
Online since
May 2010
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$32.00
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