Paper Title:
Effect of Annealing in Atomic Hydrogen or Nitrogen Atmospheres on SiOx Nanoclusters Obtained by HFCVD
  Abstract

SiOx nanoclusters were obtained by Hot Filament Chemical Vapor Deposition using a quartz solid source and atomic hydrogen. The nanoclusters were characterized by Photoluminescence, Atomic Force Microscopy, Energy Dispersive Analysis X-ray and Fourier Transform Infrared Spectroscopy. FTIR and EDS characterization clearly show that the material is non stoichiometric silicon oxide with a composition that depends on the growth parameters, such as source-substrate distance and time of growth. Nanoclusters of SiOx presented photoluminescence with two principal peaks at around 859 and 920 nm. Photoluminescence intensity was enhanced when samples were annealed in hydrogen atmosphere and quenched when they were annealed in nitrogen atmosphere. However, it was observed that the same samples annealed once more with the initial atomic hydrogen conditions showed an increase in photoluminescence. From these results we suppose the photoluminescence produced in this material is influenced by deep level transitions associated with dangling bonds passivated with hydrogen on the surface of the Si crystallites embedded within SiOx nanoclusters.

  Info
Periodical
Edited by
Guest Editor: Umapada Pal
Pages
105-111
DOI
10.4028/www.scientific.net/JNanoR.5.105
Citation
G. García-Salgado, T. Díaz-Becerril, A. Coyopol, E. Rosendo-Andrés, H. Juárez, J. Carrillo, A.I. Oliva, "Effect of Annealing in Atomic Hydrogen or Nitrogen Atmospheres on SiOx Nanoclusters Obtained by HFCVD", Journal of Nano Research, Vol. 5, pp. 105-111, 2009
Online since
February 2009
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