Paper Title:
An Advanced LOCOS-Process for the Sub-50 nm-Region Using Low-Stress PECVD-Silicon Nitrides
  Abstract

The standard Local Oxidation of Silicon (LOCOS) technique uses different oxidation rates of silicon and Low Pressure Chemical Vapour Deposited (LPCVD) silicon nitride in steam ambient to structure the field oxide. Due to different coefficients of thermal expansion a pad oxide is needed at the boundary layer to prevent stress from the substrate. This leads to a lateral diffusion of oxygen, also known as “birds beak”, which limits the minimum structure size to a few 100 nm [1]. When scaling down to this dimension, the Shallow Trench Isolation (STI) has become the standard isolation technique for fabrication of high-performance semiconductors to allow a high package density. Unfortunately the STI-process uses Chemical Mechanical Polishing (CMP) which increases the process complexity and leads to high costs. Therefore a new method which uses a low stress Plasma Enhanced Chemical Vapour Deposited (PECVD) silicon nitride without a pad oxide at the boundary layer will be presented in this paper.

  Info
Periodical
Pages
23-27
DOI
10.4028/www.scientific.net/JNanoR.6.23
Citation
K. T. Kallis, L.O. Keller, H.L. Fiedler, "An Advanced LOCOS-Process for the Sub-50 nm-Region Using Low-Stress PECVD-Silicon Nitrides ", Journal of Nano Research, Vol. 6, pp. 23-27, 2009
Online since
June 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: S.Y. Wang, Bo Lin Cheng, Can Wang, Wei Peng, S.Y. Dai, Zhao Hui Chen
Abstract:In this work, BST (x=0.7, 0.5, 0.3) films have been deposited onto Nb-SrTiO3 substrate with pulsed laser deposition. The crystal structure...
81
Authors: Bing Hao Bao, Xing Cheng Tian
Abstract:Magnetoelectric(ME) effect in magnetoelectric laminate materials have potential application in many fields. In this paper, Fe78Si9B13...
448
Authors: Hsin Chia Yang, Mu Chun Wang
Abstract:The characteristics and feasibility of the dielectric can be evaluated by the deposition of the dielectric in between two electrodes to form...
554
Authors: Ali Siblini, Ismaïl Khalil, Jean Pierre Chatelon, Jean Jacques Rousseau
Chapter II: Characterizations Techniques and Properties
Abstract:Abstract. A new technique of inductive measure to determine the initial magnetic permeability (r) of Yttrium Iron Garnet (YIG) thin films...
290
Authors: Takahiro Kawashima, Atsushi Matsui, Kazuo Muto, Moeto Nagai, Takayuki Shibata
Chapter 5: MEMS/NEMS
Abstract:In order to detect acoustic emission (AE) signals which are transient elastic waves generated by rapid release of strain energy derived from...
575