Paper Title:

CSVT as a Technique to Obtain Nanostructured Materials: WO3-x

Periodical Journal of Nano Research (Volume 9)
Main Theme Journal of Nano Research Vol. 9
Pages 31-37
DOI 10.4028/www.scientific.net/JNanoR.9.31
Citation O. Goiz et al., 2010, Journal of Nano Research, 9, 31
Online since February, 2010
Authors O. Goiz, F. Chávez, C. Felipe, R. Peña-Sierra, N. Morales
Keywords CSVT, Nanowire, Tungsten Oxide
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Abstract

The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ~350 m over the tungsten oxide source at moderate temperatures (~750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO2.7 and WO2.9 are present.