Paper Title:
CSVT as a Technique to Obtain Nanostructured Materials: WO3-x
  Abstract

The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ~350 m over the tungsten oxide source at moderate temperatures (~750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO2.7 and WO2.9 are present.

  Info
Periodical
Edited by
Guest Editors: Velumani S., R. Asomoza and Umapada Pal
Pages
31-37
DOI
10.4028/www.scientific.net/JNanoR.9.31
Citation
O. Goiz, F. Chávez, C. Felipe, R. Peña-Sierra, N. Morales, "CSVT as a Technique to Obtain Nanostructured Materials: WO3-x", Journal of Nano Research, Vol. 9, pp. 31-37, 2010
Online since
February 2010
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