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Grain Boundary Electron Trap Levels in BaTiO3 Positive Temperature Coefficient Type Ceramics

Journal Key Engineering Materials (Volumes 111 - 112)
Volume Interfaces of Ceramic Materials
Edited by K. Uematsu, Y. Moriyoshi, Y. Saito and J. Nowotny
Pages 39-56
DOI 10.4028/www.scientific.net/KEM.111-112.39
Citation B. Huybrechts et al., 1995, Key Engineering Materials, 111-112, 39
Authors B. Huybrechts, Masasuke Takata
Keywords BaTiO3, Electron Trap, Isothermal Capacitance Transient Spectroscopy ICTS, Positive Temperature Coefficient of Resistivity (PTCR), Schottky Barrier
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