Electrical Properties of Grain Boundaries in Ceramic Semiconductors |
| Journal |
Key Engineering Materials (Volumes 125 - 126) |
| Volume |
Electrical Properties of Oxide Materials |
| Edited by |
J. Nowotny and C.C. Sorrell |
| Pages |
317-330 |
| DOI |
10.4028/www.scientific.net/KEM.125-126.317 |
| Citation |
K. Mukae, 1996, Key Engineering Materials, 125-126, 317 |
| Authors |
K. Mukae |
| Keywords |
I-V Characteristic, Ceramic Semiconductor, C-V Characteristics, Double Schottky Barrier, Grain Boundary, ICTS, Interface States (or Traps), PTC Thermistors, ZnO Varistor |
| Full Paper |
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