Paper Title:
Stacking Fault and Growth Direction of β-SiC Whisker Synthesized by Carbonthermal Reduction
  Abstract

  Info
Periodical
Key Engineering Materials (Volumes 159-160)
Edited by
Hiroshige Suzuki, Katsutoshi Komeya and Keizo Uematsu
Pages
95-100
DOI
10.4028/www.scientific.net/KEM.159-160.95
Citation
K. Koumoto, W. S. Seo, "Stacking Fault and Growth Direction of β-SiC Whisker Synthesized by Carbonthermal Reduction", Key Engineering Materials, Vols. 159-160, pp. 95-100, 1999
Online since
May 1998
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Price
$32.00
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