Paper Title:
Metal-Oxide-Semiconductor (MOS) Devices Composed of Biomimetically Synthesized TiO2 Dielectric Thin Films
  Abstract

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Periodical
Key Engineering Materials (Volumes 214-215)
Edited by
M. Murata, K. Koumoto and T. Takenaka, S. Fujitsu
Pages
163-170
DOI
10.4028/www.scientific.net/KEM.214-215.163
Citation
D. Wang, Y. Masuda, W. S. Seo, K. Koumoto, "Metal-Oxide-Semiconductor (MOS) Devices Composed of Biomimetically Synthesized TiO2 Dielectric Thin Films", Key Engineering Materials, Vols. 214-215, pp. 163-170, 2002
Online since
July 2001
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Price
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