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Effects of Processing and Doping Elements on the Grain Boundary Microstructure and Mechanical Properties of SiC

Journal Key Engineering Materials (Volume 247)
Volume Advanced Ceramics and Composites
Edited by Hiroshige Suzuki, Katsutoshi Komeya and Mototsugu Sakai
Pages 331-334
DOI 10.4028/www.scientific.net/KEM.247.331
Citation Sadahiro Tsurekawa et al., 2003, Key Engineering Materials, 247, 331
Online since August, 2003
Authors Sadahiro Tsurekawa, Y. Naito, V.S.R. Murthy, Tadao Watanabe, N. Tamari
Keywords Coincidence Boundaries, Doping Elements, Grain Growth, Hardness, Hot-Pressing, Silicon Carbide (SiC), Spark Plasma Sintering (SPS)
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