Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics |
| Journal |
Key Engineering Materials (Volume 248) |
| Volume |
Electroceramics in Japan VI |
| Edited by |
T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki |
| Pages |
137-142 |
| DOI |
10.4028/www.scientific.net/KEM.248.137 |
| Citation |
Takanori Kiguchi et al., 2003, Key Engineering Materials, 248, 137 |
| Online since |
August, 2003 |
| Authors |
Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani |
| Keywords |
Buffer Layer, C-V Characteristics, Gate Dielectrics, High Resolution Transmission Electron Microscopy, Ion Drift, Rare Earth Element (REE), SiO2, Zirconia |
| Full Paper |
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