Paper Title:
Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe2O4 Thin Film on Gate Area
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Periodical
Edited by
T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki
Pages
165-168
DOI
10.4028/www.scientific.net/KEM.248.165
Citation
K. Shimizu, N. Wakiya, S. Mizukami, K. Shinozaki, N. Mizutani, "Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe2O4 Thin Film on Gate Area", Key Engineering Materials, Vol. 248, pp. 165-168, 2003
Online since
August 2003
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