Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe2O4 Thin Film on Gate Area |
| Journal |
Key Engineering Materials (Volume 248) |
| Volume |
Electroceramics in Japan VI |
| Edited by |
T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki |
| Pages |
165-168 |
| DOI |
10.4028/www.scientific.net/KEM.248.165 |
| Citation |
Kan Shimizu et al., 2003, Key Engineering Materials, 248, 165 |
| Online since |
August, 2003 |
| Authors |
Kan Shimizu, Naoki Wakiya, Satoshi Mizukami, Kazuo Shinozaki, Nobuyasu Mizutani |
| Keywords |
Electrical Property, Ferrite, Hall-Effect, Magnetic Field, Memory, PLD |
| Full Paper |
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