Paper Title:
Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor : I-V Characteristics of Circular and Opposite Patterned Ferromagnetic Thin Film Across Gate Area
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Periodical
Edited by
T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki
Pages
173-178
DOI
10.4028/www.scientific.net/KEM.248.173
Citation
S. Mizukami, K. Shimizu, N. Wakiya, K. Shinozaki, N. Mizutani, "Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor : I-V Characteristics of Circular and Opposite Patterned Ferromagnetic Thin Film Across Gate Area", Key Engineering Materials, Vol. 248, pp. 173-178, 2003
Online since
August 2003
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