Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor : I-V Characteristics of Circular and Opposite Patterned Ferromagnetic Thin Film Across Gate Area |
| Journal |
Key Engineering Materials (Volume 248) |
| Volume |
Electroceramics in Japan VI |
| Edited by |
T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki |
| Pages |
173-178 |
| DOI |
10.4028/www.scientific.net/KEM.248.173 |
| Citation |
Satoshi Mizukami et al., 2003, Key Engineering Materials, 248, 173 |
| Online since |
August, 2003 |
| Authors |
Satoshi Mizukami, Kan Shimizu, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani |
| Keywords |
Electrical Property, Fe, Hall-Effect, MOS-FET Substrate, Ni-Zn Ferrite, PLD |
| Full Paper |
Get the full paper by clicking here
|
