Effects of SiO2-Based Additives on Bi-Based Layer-Structured Ferroelectrics |
| Journal |
Key Engineering Materials (Volume 248) |
| Volume |
Electroceramics in Japan VI |
| Edited by |
T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki |
| Pages |
41-44 |
| DOI |
10.4028/www.scientific.net/KEM.248.41 |
| Citation |
Kazumi Kato et al., 2003, Key Engineering Materials, 248, 41 |
| Online since |
August, 2003 |
| Authors |
Kazumi Kato, Hiroshi Ishiwara |
| Keywords |
Bi4Ti3O12(BIT), Crystallization Behavior, Electrical Property, Ferroelectric Thin Film, SiO2-Based Additives |
| Full Paper |
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