Effects of SiO2-Based Additives on Bi-Based Layer-Structured Ferroelectrics |
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| Journal | Key Engineering Materials (Volume 248) |
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| Volume | Electroceramics in Japan VI |
| Edited by | T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki |
| Pages | 41-44 |
| DOI | 10.4028/www.scientific.net/KEM.248.41 |
| Online since | August, 2003 |
| Authors | Kazumi Kato, Hiroshi Ishiwara |
| Keywords | Bi4Ti3O12(BIT), Crystallization Behaviour, Electrical Property, Ferroelectric Thin Films, SiO2-Based Additives |
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