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Effects of SiO2-Based Additives on Bi-Based Layer-Structured Ferroelectrics

Journal Key Engineering Materials (Volume 248)
Volume Electroceramics in Japan VI
Edited by T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki
Pages 41-44
DOI 10.4028/www.scientific.net/KEM.248.41
Online since August, 2003
Authors Kazumi Kato, Hiroshi Ishiwara
Keywords Bi4Ti3O12(BIT), Crystallization Behaviour, Electrical Property, Ferroelectric Thin Films, SiO2-Based Additives
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