Construction of MFIS Structure Using Alkoxy-Derived (Y,Yb)MnO3 Thin Films |
| Journal |
Key Engineering Materials (Volume 269) |
| Volume |
Electroceramics in Japan VII |
| Edited by |
M. Miyayama, T. Takenaka, M. Takata and K. Shinozaki |
| Pages |
49-52 |
| DOI |
10.4028/www.scientific.net/KEM.269.49 |
| Citation |
Kazuyuki Suzuki et al., 2004, Key Engineering Materials, 269, 49 |
| Online since |
August, 2004 |
| Authors |
Kazuyuki Suzuki, Kiyotaka Tanaka, De Sheng Fu, Kaori Nishizawa, Takeshi Miki, Kazumi Kato |
| Keywords |
(Y,Yb)MnO3, Alkoxy-Derived Precursor, C-V Characteristics, FET-Type Nonvolatile Memory, Leak Current Density, MFIS Structure, Y2O3 |
| Full Paper |
Get the full paper by clicking here
|
