Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution |
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| Journal | Key Engineering Materials (Volumes 277 - 279) |
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| Volume | On the Convergence of Bio-, Information-, Enrivonmental-, Energy-, Space- and Nano-Technolgies |
| Edited by | Kwang Hwa Chung, Yong Hyeon Shin, Sue-Nie Park, Hyun Sook Cho, Soon-Ae Yoo, Byung Joo Min, Hyo-Suk Lim and Kyung Hwa Yoo |
| Pages | 1023-1028 |
| DOI | 10.4028/www.scientific.net/KEM.277-279.1023 |
| Citation | Sung Ho Hwang et al., 2005, Key Engineering Materials, 277-279, 1023 |
| Online since | January, 2005 |
| Authors | Sung Ho Hwang, Jung Il Lee, Jin Dong Song, Won Jun Choi, Il Ki Han, Soo Kyung Chang |
| Keywords | InAs, Quantum Dot, Size Distribution, Thermal Activation Energy |
| Abstract | We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes. |
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