Paper Title:
Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution
  Abstract

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

  Info
Periodical
Key Engineering Materials (Volumes 277-279)
Edited by
Kwang Hwa Chung, Yong Hyeon Shin, Sue-Nie Park, Hyun Sook Cho, Soon-Ae Yoo, Byung Joo Min, Hyo-Suk Lim and Kyung Hwa Yoo
Pages
1023-1028
DOI
10.4028/www.scientific.net/KEM.277-279.1023
Citation
S. H. Hwang, J. I. Lee, J. D. Song, W. J. Choi, I. K. Han, S. K. Chang, "Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution ", Key Engineering Materials, Vols. 277-279, pp. 1023-1028, 2005
Online since
January 2005
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$32.00
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