Paper Title:
Silicon Oxide Thin Film Deposition on Alumina in a Circulating Fluidized Bed Reactor
  Abstract

Silicon oxide deposition on fine alumina powders by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure was carried out in a circulating fluidized bed reactor. To deposit silicon oxide on alumina powders, the organo-silicon source precursors (tetraethoxysilane (TEOS) and hexamethyldisiloxane (HMDSO)) and oxygen were used as the reactant gases while helium and argon were used as the dilute gases. The surface property of plasma-treated alumina powder varies from hydrophobic to hydrophilic in the surface composition with variation of the discharge power. In oxygen-containing atmospheres, chemical composition of the deposited film is more inorganic with increasing the discharge power and the flow ratio of O2/precursor for both organo-silicon precursors.

  Info
Periodical
Key Engineering Materials (Volumes 277-279)
Edited by
Kwang Hwa Chung, Yong Hyeon Shin, Sue-Nie Park, Hyun Sook Cho, Soon-Ae Yoo, Byung Joo Min, Hyo-Suk Lim and Kyung Hwa Yoo
Pages
577-582
DOI
10.4028/www.scientific.net/KEM.277-279.577
Citation
S. M. Park, S. H. Jung, S. H. Park, S. D. Kim, "Silicon Oxide Thin Film Deposition on Alumina in a Circulating Fluidized Bed Reactor", Key Engineering Materials, Vols. 277-279, pp. 577-582, 2005
Online since
January 2005
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$32.00
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