In this study, ZnO and CuO doped zinc oxide thin films were cathodically deposited in aqueous zinc chloride solutions in the presence of oxygen on a Pt/Ti/SiO2/Si substrate through an electrochemical reaction. A mercurous sulfate electrode was used as a reference electrode and the counter electrode was a Pt spiral wire. Deposition was carried out in solutions containing Zn2+ ions introduced as ZnCl2 salt at concentrations ranging from 5.0 x 10-4 to 5.0 x 10-2 M. The bath temperatures were controlled from 65°C to 80°C. The oxygen gas was introduced from argon/oxygen mixtures allowing its partial pressure to be fixed along with its concentration in the solution. Doping of CuO was carried out in cupric nitrate or a cupric chloride/0.1M KCl solution. The influence of the Cu/Zn concentration, deposition temperature of a solution, applied cathodic potential and deposition time were optimized. After the potential was applied, the cathodic current reached a steady state within 5 min. The composition, and the characterization of the surface of the films were investigated through X-ray diffractometry, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy.