Paper Title:
Solar Cells from Thin Silicon Layers on AlN
  Abstract

Polycrystalline silicon layers were grown on AlN ceramic substrates in a rapid thermal chemical vapor deposition system at high temperature (~1150°C). Larger columnar grains, > 5µm in size, were obtained by the zone melting recrystallization (ZMR) technique. The p-n junction is formed by a phosphorous diffusion process to make a solar cell. Solar cell devices based on this Si layer result possess an open-circuit voltage of about 0.17V and a short-circuit current of about 6.6mA/cm2.

  Info
Periodical
Key Engineering Materials (Volumes 280-283)
Edited by
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages
1161-1162
DOI
10.4028/www.scientific.net/KEM.280-283.1161
Citation
Z. J. Wan, Y. Huang, H. X. Zhang, H. F. Li, "Solar Cells from Thin Silicon Layers on AlN", Key Engineering Materials, Vols. 280-283, pp. 1161-1162, 2005
Online since
February 2007
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Price
$32.00
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