Paper Title:
Preparation and Dielectric Properties of SiC-AlN Solid Solutions
  Abstract

The microstructure and microwave dielectric properties of inhomogeneous SiC-AlN solid solutions, hot pressed under a pressure of 40 MPa, have been investigated. Microstructure analysis detected the existence of BN in the resulted samples, which may be a reason that homogeneous solid solution was not formed for the samples with AlN content higher than 20%. The dc resistivity of the solid solutions at room temperature varies from 8 × 103 Ω m to 1 × 109 Ω m. Ion jump and dipole relaxation losses are the main mechanism of dielectric losses.

  Info
Periodical
Key Engineering Materials (Volumes 280-283)
Edited by
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages
127-130
DOI
10.4028/www.scientific.net/KEM.280-283.127
Citation
X. Y. Zhang, S. H. Tan, W.-W. Xu, S. M. Dong, Z. R. Huang, Y. Dong, P.-H. Wu, D. L. Jiang, "Preparation and Dielectric Properties of SiC-AlN Solid Solutions", Key Engineering Materials, Vols. 280-283, pp. 127-130, 2005
Online since
February 2007
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$32.00
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