Paper Title:
Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing
  Abstract

ANSYS software was used to simulate the superposition rule of multi-thermal-source temperature field. The SiC productions synthesized by multi-thermal-source furnace were examined through X-ray diffractometer (XRD) and energy depressive spectroscopy (EDS). The crystalline and density were determined by scanning electron microscopy (SEM). The superposition rule and influence of multithermal- source temperature field on SiC synthesizing were clarified.

  Info
Periodical
Key Engineering Materials (Volumes 280-283)
Edited by
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages
1283-1286
DOI
10.4028/www.scientific.net/KEM.280-283.1283
Citation
X. G. Wang, B. Yang, S. Shao, "Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing", Key Engineering Materials, Vols. 280-283, pp. 1283-1286, 2005
Online since
February 2007
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$32.00
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