Paper Title:
The Structure and Hardness of rf-Reactive Sputtered Ti-Zr-N Films
  Abstract

Ternary Ti-Zr-N thin films were synthesized by rf-reactive sputtering in Ar–N2 plasma. Effects of the substrate temperature in the sputtering process on the microstructures of Ti-Zr-N thin films were investigated using SEM, TEM, XRD and AES techniques. The hardness of the Ti-Zr-N film increases as the substrate temperature in reactive sputtering increases. The reactive sputtered Ti-Zr-N film is characterized as polycrystalline in nature with two dominant orientations of (111) and (200). A substrate temperature of 300°C is suggested for getting a densely packed film structure with the highest hardness.

  Info
Periodical
Key Engineering Materials (Volumes 280-283)
Edited by
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages
1449-1452
DOI
10.4028/www.scientific.net/KEM.280-283.1449
Citation
H. A. Park, H. S. Hong, S. K. Hwang, C. M. Lee, "The Structure and Hardness of rf-Reactive Sputtered Ti-Zr-N Films", Key Engineering Materials, Vols. 280-283, pp. 1449-1452, 2005
Online since
February 2007
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