Ferroelectric Properties of Bismuth Titanate Ceramics by Sm3+/V5+ Substitution |
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| Journal | Key Engineering Materials (Volumes 280 - 283) |
|---|---|
| Volume | High-Performance Ceramics III |
| Edited by | Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li |
| Pages | 167-170 |
| DOI | 10.4028/www.scientific.net/KEM.280-283.167 |
| Citation | M. Chen et al., 2007, Key Engineering Materials, 280-283, 167 |
| Online since | February, 2007 |
| Authors | M. Chen, Zu Li Liu, Kai Lun Yao |
| Keywords | Ceramic, Doping, Ferroelectric, Microstructure |
| Abstract | The ferroelectricity of Bi3.2Sm0.8Ti3O12 (BST) and Bi3.2Sm0.8Ti2.97V0.03O12 (BSTV)ceramics prepared at 1100oC by a conventional ceramic technique is investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BST ceramics are 16 µC/cm2 and 62kV/cm, respectively. Furthermore, V5+ substitution improves the Pr value of the BST ceramics up to 25µC/cm2, which is larger than that of the BST ceramics. Therefore, the co-substitution of Sm3+ and V5+ in Bi4Ti3O12 (BIT) ceramics is effective for the improvement of its ferroelectricity. |
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