Effects of Lanthanum Modification on the Structure and Electrical Properties of PZN-PZT Ceramics |
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| Journal | Key Engineering Materials (Volumes 280 - 283) |
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| Volume | High-Performance Ceramics III |
| Edited by | Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li |
| Pages | 227-230 |
| DOI | 10.4028/www.scientific.net/KEM.280-283.227 |
| Citation | X. Zeng et al., 2007, Key Engineering Materials, 280-283, 227 |
| Online since | February, 2007 |
| Authors | X. Zeng, Ai Li Ding, X.S. Zheng, Yong Zhang, Ping Sun Qiu |
| Keywords | Electrical Properties, Lanthanum Doped, Microstructure, PZN-PZT |
| Abstract | La-modified PZN-PZT compositions with representative formula Pb1-0.7xLa0.7x(Zn1/3Nb2/3)0.3- (Zr0.55Ti0.45)0.7(1-x/4)O3 were prepared by the columbite precursor method. La content, x, was varied from 0 to 8mol%. Effects of La doping on microstructure, dielectric and piezoelectric properties were investigated. The results showed that in present system La doping promotes the formation of pyrochlore phase and the phase shifted from rhombohedral to tetragonal structure with increasing La content. It was also found that La doping makes dielectric permittivity maximum decrease and the degree of diffuse phase transition enhance. Appropriate amount of La doping could improve the piezoelectric properties. |
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