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Effects of CuO-V2O5-Bi2O3 Additions on the Microstructure and Microwave Dielectric Properties of 0.42ZnNb2O6-0.58TiO2 Ceramics

Journal Key Engineering Materials (Volumes 280 - 283)
Volume High-Performance Ceramics III
Edited by Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages 27-30
DOI 10.4028/www.scientific.net/KEM.280-283.27
Citation Jin Wang et al., 2007, Key Engineering Materials, 280-283, 27
Online since February, 2007
Authors Jin Wang, Zhen Xing Yue, Ying Chun Zhang, Zhi Lun Gui, Long Tu Li
Keywords Microstructure, Microwave Dielectric Properties, ZnNb2O6 Ceramics
Abstract

The effects of additions on the microstructure and microwave dielectric properties of 0.42ZnNb2O6-0.58TiO2 (ZNT) ceramics were investigated systematically. The sintering temperature of ZNT ceramics doped with different amounts of CuO, Bi2O3 and V2O5 can be effectively reduced. The phase of doped samples was studied compared to the undoped ZNT ceramics. For densified ZNT ceramics with the increasing amount of dopant CuO-Bi2O3-V2O5, the dielectric constants (εr) of densified samples ranges from 38 to 42, the Q×f values decrease evidently and ranges from 13300 GHz to 5000 GHz and the τf values are shifted toward negative.

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