Paper Title:
Nonlinear Electrical Properties of (Sc, Ta) Doped TiO2 Varistor Ceramics
  Abstract

The nonlinear electrical properties of TiO2-based varistor doped with 0.25mol% Ta2O5 and different contents of Sc2O3 were investigated. It was found that the TiO2 varistor ceramic doped with 0.10mol% Sc2O3 exhibited an optimal nonlinear coefficient of 7.8, a breakdown electrical field of 16.0V/mm, and relative dielectric constant of 1.27 × 105 (measured at 1 kHz). In order to analyze the effect of Sc2O3 on TiO2 varistors, studies were made on the capacitance versus voltage characteristics. A Schottky-type barrier, which is assumed as the origin of varistor behavior, was inferred from the C-V measurement. The barrier height and donor concentration were obtained as 0.41eV and 1.21 × 1026cm-3, respectively, for sample doped with 0.10mol% Sc2O3. Analogized to the ZnO varistors, the formation mechanism of Schottky-type barrier was discussed in this paper by the theory of defect in crystal lattice.

  Info
Periodical
Key Engineering Materials (Volumes 280-283)
Edited by
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages
289-292
DOI
10.4028/www.scientific.net/KEM.280-283.289
Citation
W. B. Su, J. F. Wang, H. C. Chen, G. Z. Zang, P. Qi, C. M. Wang, "Nonlinear Electrical Properties of (Sc, Ta) Doped TiO2 Varistor Ceramics", Key Engineering Materials, Vols. 280-283, pp. 289-292, 2005
Online since
February 2007
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$32.00
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