Paper Title:
Study on Si Dependence of RB-SiC Thermoelectric Properties
  Abstract

The effects of free silicon on thermoelectric properties of reaction-bounded silicon carbide (RB-SiC) were studied. RB-SiC ceramic consists of some free silicon after reaction sintering. Some RB-SiC samples were reheated at high temperature in vacuum to adjust silicon content. The results showed that free silicon affects thermoelectric properties remarkably, especially for the thermoelectric power. A surprising phenomenon was found in SiC/Si composite consisting ~20wt% free-Si, i.e., thermoelectric power, figure of merit Z and ZT are all sharply increased above 400oC. The peak value (4.2X10-4) of ZT appears in original SiC/Si composite at about 500oC, which is increased more than 1000 times than that at room temperature.

  Info
Periodical
Key Engineering Materials (Volumes 280-283)
Edited by
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages
401-404
DOI
10.4028/www.scientific.net/KEM.280-283.401
Citation
G. J. Qiao, Y.W. Shi, J. Q. Gao, H. J. Wang, J. F. Yang, Z. H. Jin, "Study on Si Dependence of RB-SiC Thermoelectric Properties", Key Engineering Materials, Vols. 280-283, pp. 401-404, 2005
Online since
February 2007
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$32.00
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