Paper Title:
Preparation and Characterization of Ordered Macroporous ZnO Films for Photonic Application
  Abstract

Wide band-gap semiconductor ZnO film with ordered face-centered cubic (FCC) structure air holes was prepared by electrochemical process. The porous ZnO film was prepared in zinc nitrate aqueous solution, using the indium tin oxide (ITO) substrate covered with synthetic opals as cathode by potentiostatic method. In order to improve the filling ratio of ZnO in the opal interstices, various potentials were applied to control the deposition speeds. The porous ZnO film was characterized by X-ray diffraction and Scanning Electron Microscope and a photonic band gap at about 568nm was observed by micro-region reflection spectrometer in ZnO inverse opals.

  Info
Periodical
Key Engineering Materials (Volumes 280-283)
Edited by
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages
569-572
DOI
10.4028/www.scientific.net/KEM.280-283.569
Citation
M. Fu, J. Zhou, R. L. Zong, B. Li, L. T. Li, "Preparation and Characterization of Ordered Macroporous ZnO Films for Photonic Application", Key Engineering Materials, Vols. 280-283, pp. 569-572, 2005
Online since
February 2007
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Price
$32.00
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