Paper Title:
Development of BaTiO3 Based X7R Wafers for Single-Layer Capacitors
  Abstract

Research on the development and characterization of X7R BaTiO3 dielectric wafers for high frequency single-layer capacitors has been carried out. Commercial BaTiO3 powders were processed and optimized in dielectric constant (er), dissipation factor (DF) and temperature coefficient of capacitance (TCC). The results indicate a strong effect of sintering temperature on dielectric properties as well as on mechanical properties of the BaTiO3. It has been shown that the highest dielectric constant is achieved at high sintering temperatures (>1400°C) and lowest TCC at lower sintering temperatures (<1300°C). By optimizing fabrication process e.g. dry pressing, cold isostatic pressing, sintering, and machining such as grinding and lapping, BaTiO3 wafers of dielectric constant from 3400 to 3600, with a diameter approximately 50mm and thickness 150µm, have been manufactured successfully. The fabricated thin wafers exhibit the X7R capacitor characteristics of the dissipation factor (<3%) and temperature coefficient of capacitance (<±15%) in the temperature range of –55°C to 125°C.

  Info
Periodical
Key Engineering Materials (Volumes 280-283)
Edited by
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Pages
69-72
DOI
10.4028/www.scientific.net/KEM.280-283.69
Citation
Z. Yu, V. D. Krstić, J. Ng, "Development of BaTiO3 Based X7R Wafers for Single-Layer Capacitors", Key Engineering Materials, Vols. 280-283, pp. 69-72, 2005
Online since
February 2007
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Price
$32.00
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