CuInS2 thin films were deposited on galss substrate by successive ionic layer absorption and reaction (SILAR) method at room temperature. CuCl2, InCl3, and Na2S were used as precursor materials. The thin films were obtained during the dipping of 20-40 cycles and after annealing in the N2 atmosphere at 500°C. The characterization of the film was carried out by X-ray diffraction, scanning electron microscopy, optical absorption spectrum and X-ray photoelectron spectra. Quantification of the XPS peaks shows that the molar ratio of Cu:In:S of the film is close to the stoichiometry of CuInS2. XRD result demonstrated that the formed compound is CuInS2 with chalcopyrites crystal structure. Direct band gap was found to be 1.5eV from optical absorption spectrum.