Paper Title:
Effect of Carbon Black Addition on Reaction-Bonded Silicon Carbide Ceramics
  Abstract

High strength reaction-bonded silicon carbide ceramics was successfully produced by reducing the amount of residual silicon and the silicon pocket size with carbon black as an additional carbon source. A prototype of wafer carrier was also produced in near-net dimension by planar contact infiltration of molten silicon into a preform joined with six pieces of simple shape by eliminating process shrinkages. Forming shrinkages were decreased to a negligible level by compression molding, while sintering shrinkage was eliminated by reactive infiltration of molten silicon.

  Info
Periodical
Edited by
Hai-Doo Kim, Hua-Tay Lin and Michael J. Hoffmann
Pages
189-193
DOI
10.4028/www.scientific.net/KEM.287.189
Citation
J. S. Kim, H.W. Jun, H. Song, J. H. Lee, H. W. Lee, "Effect of Carbon Black Addition on Reaction-Bonded Silicon Carbide Ceramics", Key Engineering Materials, Vol. 287, pp. 189-193, 2005
Online since
June 2005
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