Paper Title:
Development of EBC for Silicon Nitride
  Abstract

Various coating methods of EBC layer for silicon nitride were discussed. High density EBC layer was successfully coated by different techniques such as sputtering, sol-gel and reaction sintering methods. Water vapor corrosion and recession mechanisms of Lu2Si2O7 which is a potential material for EBC were discussed. The problems in the development of EBC revealed by corrosion tests were summarized. The most important problem addressed here was the corrosion of silica at grain boundary. Due to corrosion of silica at the boundary, formation of porous surface is inevitable, then the silicon nitride substrate gets easily oxidized and/or corroded by water vapor. To resolve this issue, we propose a new EBC material without boundary silica and the corrosion mechanism of this improved EBC material is discussed.

  Info
Periodical
Edited by
Hai-Doo Kim, Hua-Tay Lin and Michael J. Hoffmann
Pages
449-456
DOI
10.4028/www.scientific.net/KEM.287.449
Citation
S. Ueno, D. D. Jayaseelan, N. Kondo, T. Ohji, S. Kanzaki, H. T. Lin, "Development of EBC for Silicon Nitride ", Key Engineering Materials, Vol. 287, pp. 449-456, 2005
Online since
June 2005
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Price
$32.00
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