Paper Title:
Nitrogen Plasma Source Ion Implantation (PSII) for Improvement of Blood-Compatibility of Silicon
  Abstract

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Periodical
Key Engineering Materials (Volumes 288-289)
Edited by
Xingdong Zhang, Junzo Tanaka, Yaoting Yu and Yasuhiko Tabata
Pages
335-338
DOI
10.4028/www.scientific.net/KEM.288-289.335
Citation
P. Yang, G. J. Wan, X. Xie, Y.X. Leng, H. F. Zhou, P. K. Chu, N. Huang, "Nitrogen Plasma Source Ion Implantation (PSII) for Improvement of Blood-Compatibility of Silicon", Key Engineering Materials, Vols. 288-289, pp. 335-338, 2005
Online since
June 2005
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