Labeled Weibull Plot of a C-Derived Si3N4-SiC Nanocomposite |
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| Journal | Key Engineering Materials (Volume 290) |
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| Volume | Fractography of Advanced Ceramics II |
| Edited by | J. Dusza, R. Danzer and R. Morrell |
| Pages | 292-295 |
| DOI | 10.4028/www.scientific.net/KEM.290.292 |
| Citation | Monika Kašiarová et al., 2005, Key Engineering Materials, 290, 292 |
| Online since | July, 2005 |
| Authors | Monika Kašiarová, Ján Dusza, Miroslav Hnatko, Pavol Šajgalík |
| Keywords | Fractography, Si3N4/SiC Nanocomposites, Technological Defects, Weibull Analysis |
| Abstract | Four-point bending strength and Weibull distribution of the strength values of a carbon derived Si3N4-SiC nanocomposite have been investigated. The fracture origins were identified and characterized and a “labeled Weibull plot” was constructed. The fracture origins are surface, subsurface and volume located technological defects with a dimension from 10 µm to 180 µm, mainly in the form of cluster of pores and large SiC grains. |
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