Paper Title:
Labeled Weibull Plot of a C-Derived Si3N4-SiC Nanocomposite
  Abstract

Four-point bending strength and Weibull distribution of the strength values of a carbon derived Si3N4-SiC nanocomposite have been investigated. The fracture origins were identified and characterized and a “labeled Weibull plot” was constructed. The fracture origins are surface, subsurface and volume located technological defects with a dimension from 10 µm to 180 µm, mainly in the form of cluster of pores and large SiC grains.

  Info
Periodical
Edited by
J. Dusza, R. Danzer and R. Morrell
Pages
292-295
DOI
10.4028/www.scientific.net/KEM.290.292
Citation
M. Kašiarová, J. Dusza, M. Hnatko, P. Šajgalík, "Labeled Weibull Plot of a C-Derived Si3N4-SiC Nanocomposite ", Key Engineering Materials, Vol. 290, pp. 292-295, 2005
Online since
July 2005
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