Paper Title:
Mechanical Properties and Process of ZnO Deposited Various Substrates
  Abstract

ZnO is an n-type semiconductor having a hexagonal wurzite structure. ZnO exhibits good piezoelectric, photoelectric and optical properties and might be a good candidate for an electroluminescence device like an UV laser diode. But the important problems, such as substrate kinds and substrate temperature are raised its head, so they need to optimize deposit condition. Because these devices are very small and films are very thin, those are often prepared in limited quantities and shapes unsuitable for the extensive mechanical test. In this present work, ZnO thin films are prepared on the glass, GaAs (100), Si (111) and Si (100) substrates at different temperatures by the pulsed laser deposition (PLD) method. ZnO was evaluated in term of crystalline through X-ray diffraction (XRD), mechanical properties such as hardness, elastic modulus through nano-indenter. XRD measurements indicate that the substrate temperature of 200-500, 200-500, 300-500, and 300-500oC was the optimized conditions of crystalline for the glass, GaAs (100), Si (111), and Si (100) substrates, respectively. In spite of the films deposited on the different substrates, the films always show (002) orientation at the optimized conditions. Mechanical properties such as hardness and elastic modulus are influenced substrate crystallization. In case of Si (111) substrate, hardness and elastic modulus are about 10, 150GPa, respectively.

  Info
Periodical
Key Engineering Materials (Volumes 297-300)
Edited by
Young-Jin Kim, Dong-Ho Bae and Yun-Jae Kim
Pages
533-538
DOI
10.4028/www.scientific.net/KEM.297-300.533
Citation
H. C. Jung, H. K. Yoon, Y. S. Yu, "Mechanical Properties and Process of ZnO Deposited Various Substrates ", Key Engineering Materials, Vols. 297-300, pp. 533-538, 2005
Online since
November 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jie Sun, Lizhong Hu, Zhaoyang Wang, Guotong Du
Abstract:This work demonstrates the condition optimization during liquid phase deposition (LPD) of SiO2/GaAs films. LPD method is further applied to...
1725
Authors: Dariusz Chrobak, Artur Chrobak, Roman Nowak
Abstract:The present paper reports molecular dynamics study of the elastic deformation of zinc- blende GaAs crystal by spherical diamond indenter...
213
Authors: P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, Kentaro Onabe
Abstract:The GaAs1-xNx alloy semiconductor has been grown on GaAs (001), (111)A and (011) substrates by metalorganic vapor-phase epitaxy. High...
825
Authors: Jian Qing Liu, Yong Hai Chen, Bo Xu, Zhan Guo Wang
Abstract:We have fabricated site-controlled InAs quantum wires (QWRs) on the cleaved surface (110) of AlGaAs/GaAs superlattices (SLs) structures by...
73
Authors: Zeng Lei Liu, Nian Dong Jiao, Zhi Dong Wang, Zai Li Dong, Lian Qing Liu
Chapter 2: Nano and Micro Devices and Systems
Abstract:This paper introduces atomic force microscope (AFM) deposition method to fabricate nanostructures and nanodevices. Field emission theory is...
69