This paper reports on the formation of film structures and the highly improved photovoltaic output current of the lead lanthanum zirconate titanate (PLZT) employed. The photovoltaic effect of ferroelectrics has the advantage of its simple mechanisms of non-bias applications which are indispensable for semiconductor p-n junctions. But the output current of PLZT bulk is too low for use as a device current source. The PLZT film structure exhibited μA output current upon light illumination. The photovoltaic current of the PLZT film was more than 102 times than that of bulk PLZT. These differences are due to the characteristics of the design of the film including the configuration of the electrode. The PLZT film also has the advantage of easy output control and suitability for use on Si. Results show that the photovoltaic effect of the ferroelectric film is useful as the current source for micro-electro-mechanical systems (MEMS).