Diffusion Behavior at the Interface of (Ba,Sr)TiO3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film |
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| Journal | Key Engineering Materials (Volume 301) |
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| Volume | Electroceramics in Japan VIII |
| Edited by | Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 257-260 |
| DOI | 10.4028/www.scientific.net/KEM.301.257 |
| Citation | Naoki Wakiya et al., 2006, Key Engineering Materials, 301, 257 |
| Online since | January, 2006 |
| Authors | Naoki Wakiya, Akinori Higuchi, Haruki Ryoken, Hajime Haneda, Keiichi Fukunaga, Noriyoshi Shibata, Toshimasa Suzuki, Yuji Nishi, Kazuo Shinozaki, Nobuyasu Mizutani |
| Keywords | Barium Strontium Titanate, Buffer Layer, Epitaxial, Film, SIMS, TEM |
| Abstract | Diffusion behavior at the interface of (001)-epitaxially grown (Ba,Sr)TiO3(BST)/electrode/buffer layer/Si thin films was examined by use of secondary ion-microprobe mass spectrometer (SIMS) and transmission electron microscope (TEM) attached with energy dispersive X-ray fluorescence spectrometer (EDX). As the (001)-epitaxially grown film, following three kinds of structure was grown; (1)BST/(La,Sr)CoO3(LSCO)/CeO2/yttria-stabilized zirconia(YSZ)/Si, (2)BST/PLD-deposited Pt/SrTiO3(ST)/LSCO/CeO2/YSZ/Si and (3)BST/sputter-deposited Pt/ST/LSCO/CeO2/YSZ/Si. For sample (1), uphill diffusion of Sr and Ti was observed at the interface of YSZ and SiO2. Diffusion of Co into CeO2 layer was also detected. These tendencies of diffusion were also observed for samples (2) and (3). In addition to these tendencies, apparent uphill diffusion of Co at the Pt layer was observed for sample (2). However, this diffusion was not observed for sample (3). It was also observed that oxygen diffusion was prevented for sputter-deposited Pt. On the other hand, oxygen diffusion was observed for PLD-deposited Pt. |
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