Paper Title:
Diffusion Behavior at the Interface of (Ba,Sr)TiO3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film
  Abstract

Diffusion behavior at the interface of (001)-epitaxially grown (Ba,Sr)TiO3(BST)/electrode/buffer layer/Si thin films was examined by use of secondary ion-microprobe mass spectrometer (SIMS) and transmission electron microscope (TEM) attached with energy dispersive X-ray fluorescence spectrometer (EDX). As the (001)-epitaxially grown film, following three kinds of structure was grown; (1)BST/(La,Sr)CoO3(LSCO)/CeO2/yttria-stabilized zirconia(YSZ)/Si, (2)BST/PLD-deposited Pt/SrTiO3(ST)/LSCO/CeO2/YSZ/Si and (3)BST/sputter-deposited Pt/ST/LSCO/CeO2/YSZ/Si. For sample (1), uphill diffusion of Sr and Ti was observed at the interface of YSZ and SiO2. Diffusion of Co into CeO2 layer was also detected. These tendencies of diffusion were also observed for samples (2) and (3). In addition to these tendencies, apparent uphill diffusion of Co at the Pt layer was observed for sample (2). However, this diffusion was not observed for sample (3). It was also observed that oxygen diffusion was prevented for sputter-deposited Pt. On the other hand, oxygen diffusion was observed for PLD-deposited Pt.

  Info
Periodical
Edited by
Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
257-260
DOI
10.4028/www.scientific.net/KEM.301.257
Citation
N. Wakiya, A. Higuchi, H. Ryoken, H. Haneda, K. Fukunaga, N. Shibata, T. Suzuki, Y. Nishi, K. Shinozaki, N. Mizutani, "Diffusion Behavior at the Interface of (Ba,Sr)TiO3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film", Key Engineering Materials, Vol. 301, pp. 257-260, 2006
Online since
January 2006
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Sheng Guo Lu, Philip A. Friddle, Z.K. Xu, G.G. Siu, Haydn Chen, K.H. Wong, C.L. Mak
Abstract:Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Si...
849
Authors: Xue Feng Ma, Shu Bin Wang, Yue Zhang
Abstract:Epitaxial MgO thin films were deposited on Si(100) substrate by atmospheric-pressure metalorganic chemical vapor deposition for using as...
69
Authors: Takashi Nozaka, Yoji Mizutani, Bhakdisongkhram Gun, Takuya Tsuchikawa, Masahiro Echizen, Takashi Nishida, Hiroaki Takeda, Kiyoshi Uchiyama, Tadashi Shiosaki
Abstract:The (Ba0.6Sr0.4)TiO3 (BST) thin films were formed on a Pt bottom electrode/glazed-Al2O3 substrates by a chemical solution deposition (CSD)...
191
Authors: Kentaro Morito, Toshimasa Suzuki, Youichi Mizuno, Isao Sakaguchi, Naoki Ohashi, Kenji Matsumoto, Hajime Haneda
Abstract:The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass...
281
Authors: Xiao Hua Sun, Ping Feng, Jun Zou, Min Wu
Abstract:Barium strontium titanate Ba0.6Sr0.4TiO3 (BST) thin films were fabricated by pulsed laser deposition (PLD) technique on Pt/TiO2/SiO2/Si...
504