Preparation and Optical Properties of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Film on Si Substrates with Buffer Layer Using Pulsed Laser Deposition |
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| Journal | Key Engineering Materials (Volume 301) |
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| Volume | Electroceramics in Japan VIII |
| Edited by | Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 265-268 |
| DOI | 10.4028/www.scientific.net/KEM.301.265 |
| Citation | Naru Nemoto et al., 2006, Key Engineering Materials, 301, 265 |
| Online since | January, 2006 |
| Authors | Naru Nemoto, Naoki Wakiya, Kazuo Shinozaki, Takanori Kiguchi, Keisuke Satoh, Masatoshi Ishii, Masao Kondo, Kazuaki Kurihara, Nobuyasu Mizutani |
| Keywords | Buffer Layer, Epitaxial, Optical Property, PLD, PMN-PT, Thin Film |
| Abstract | Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO3/SrTiO3/(La,Sr)CoO3/CeO2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method. |
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