Paper Title:
Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate
| Periodical | Key Engineering Materials (Volume 301) |
|---|---|
| Main Theme | Electroceramics in Japan VIII |
| Edited by | Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 269-272 |
| DOI | 10.4028/www.scientific.net/KEM.301.269 |
| Citation | Hisao Suzuki et al., 2006, Key Engineering Materials, 301, 269 |
| Online since | January, 2006 |
| Authors | Hisao Suzuki, Yuki Miwa, Tomoya Ohno, Masayuki Fujimoto |
| Keywords | CSD, Electrical Property, Orientation Control, Perovskite-Type Oxide Electrode Thin Films, PZT/Oxide Electrode Thin Film Capacitors |
| Price | US$ 28,- |
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Abstract
This paper describes the deposition of PZT/oxide electrode thin film capacitors on Si(100) substrate with a CSD (Chemical Solution Deposition). Highly (100)&(001)-oriented SRO/LNO electrode films with a perovskite structure were obtained by the annealing at 700 °C from a precursor solution of Sr and RuCl3·2H2O for SRO and from a precursor solution of La(NO3)3 and Ni(CH3COO)2 for LNO. In addition, highly (100)&(001)-oriented PZT/oxide electrode capacitor were deposited on SRO/LNO/Si substrate by annealing at 650 °C, showing a good ferroelectricity of Pr=22μC/cm2 and Ec=55 kV/cm. In addition, the resultant PZT/oxide electrode thin film capacitors exhibited no fatigue up to 108 switching cycles.
