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Synthesis and Properties of Nd-Substituted Bismuth Titanate Polycrystalline Thin Films with a-/b-Axes Orientation

Journal Key Engineering Materials (Volume 301)
Volume Electroceramics in Japan VIII
Edited by Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages 57-60
DOI 10.4028/www.scientific.net/KEM.301.57
Citation Masahiro Kurachi et al., 2006, Key Engineering Materials, 301, 57
Online since January, 2006
Authors Masahiro Kurachi, Hirofumi Matsuda, Takashi Iijima, Hiroshi Uchida, Seiichiro Koda
Keywords Bismuth Layer Structured Ferroelectrics, Chemical Solution Deposition, Lanthanoids, Orientation Control, Poly-Crystalline Film
Abstract

Nd-substituted Bi4Ti3O12 (BNT) polycrystalline thin films with preferred a-/b-axes orientations were grown on sputter-grown IrO2(101) layers by chemical solution deposition method. After optimizing the heat treatment conditions, insulating characters and ferroelectric properties in 250-nm-thick BNT thin films with a-/b-axes orientations were investigated at room temperature. Low leakage current density of J=10-7~10-8 A/cm2 at 100 kV/cm and fair value of remnant polarization (2Pr=31 μC/cm2 at 400 kV/cm) were measured even though the Bi2O2 blocking layer aligned parallel to the film normal.

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