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Development of Lead-Free Piezoelectric Thick Films with a/b-Axis-Oriented Bi4-xPrxTi3O12

Journal Key Engineering Materials (Volume 301)
Volume Electroceramics in Japan VIII
Edited by Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages 61-64
DOI 10.4028/www.scientific.net/KEM.301.61
Online since January, 2006
Authors Hirofumi Matsuda, Takashi Iijima
Keywords Bismuth Layer-Structured Ferroelectrics, Chemical Solution Deposition, Orientation Control, Piezo MEMS, Poly-Crystalline Thick Film
Abstract Pr-substituted Bi4Ti3O12 (BPT, Bi4-xPrxTi3O12, x=0.1-0.4) polycrystalline thick films with a-/b-axes orientations and thickness of 2-3 μm were grown on sputter-grown IrO2 layers by chemical solution deposition method for developing lead-free piezoelectric film microdevices. Electric-field-induced strains measurements were performed by double-beam laser displacement meter and longitudinal strain of e=0.25 % under 400 kV/cm and piezoelectric coefficient d33=63 pm/V at 10 Hz were observed in BPT thick film of x=0.1 with a-/b-axes mixed orientations. The value of strain closely related to spontaneous polarization and monotonously decreased with increasing x. Microstructures of 3 μm-thick BPT films were fabricated by photolithography and dry etching processes with several tens micrometers in size.
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