Paper Title:
Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO3 Ferroelectrics/Insulator Stacking Layers
  Abstract

The (Y,Yb)MnO3 films were crystallized on Y2O3 layers using alkoxy-derived precursor solutions. As a result of investigation of the effect of the Y2O3 layer on the dielectric properties of the (Y,Yb)MnO3/Y2O3/Si, the crystallographic properties such as the orientation and surface morphology of the (Y,Yb)MnO3 thin films depended on the crystallographic appearance of the insulator layer. Following that, the dielectric properties of the MFIS structures varied. For the construction of excellent MFIS structure, the improvement of the orientation, crystallinity, and surface smoothness of the (Y,Yb)MnO3 film by the optimization of the microstructure and dielectric property of the insulator is necessary.

  Info
Periodical
Edited by
Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
65-70
DOI
10.4028/www.scientific.net/KEM.301.65
Citation
K. Suzuki, K. Tanaka, T. Kimura, K. Nishizawa, T. Miki, K. Kato, "Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO3 Ferroelectrics/Insulator Stacking Layers", Key Engineering Materials, Vol. 301, pp. 65-70, 2006
Online since
January 2006
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